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MMBTSC1815
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended.
SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C)
O
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=6V, IC=2mA Current Gain Group
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 60 50 5 150 50 200 150 -55 to +150
Unit V V V mA mA mW
O
C C
O
Symbol
Min.
Typ.
Max.
Unit
O Y G L
at VCE=6V, IC=150mA Collector Saturation Voltage at IC=100mA, IB=10mA Base Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V at VEB=5V Gain Bandwidth Product at VCE=10V, IC=1mA Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, RG=10Kat
hFE hFE hFE hFE hFE VCE(sat) VBE(sat) ICBO IEBO fT COB NF
70 120 200 350 25 80 -
2 1
140 240 400 700 0.25 1 0.1 0.1 3 1
V V A A MHz pF dB
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/12/2005
MMBTSC1815
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/12/2005

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